Samsung Electronics just announced a breakthrough technology on how they’ve managed to assemble a three-dimensional (3D) Vertical NAND (V-NAND) flash memory against the typical planar cell structures of forming NAND flash.
Now, this new 3D V-NAND flash memory offers a 128GB capacity in a single chip, with even 1TB on its advanced implementation. Samsung actually got to stack up to as many as 24 cell layers vertically, allowing them to produce higher density V-NAND memory products. The process actually improved the NAND memory from 2x minimum to up to a maximum of 10 times reliability, with twice the write performance of the customary NAND flash memory as well.
This technological feat has been into 10 years in the making, with Samsung resulting to over 300 patents pending on 3D memory worldwide. The new memory chips will be used around a wide range of applications from consumer electronics to even enterprise levels, which include embedded NAND storage and solid state drives or SSDs.
Samsung Electronics is currently on mass producing the first 3D V-NAND chips that is expected to land on SSD memory by this year, and on electronic and mobile devices to be as early as 2014.